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  ts9004 page 1 ? 2012 touchstone semiconductor, inc. all rights reserved. features ? ultra-low quiescent current: 5.1 a (max), all comparators plus reference ? single or dual power supplies: single: +2.5v to +11v dual: 1.25v to 5.5v ? input voltage range includes negative supply ? 7 s propagation delay ? push-pull ttl/cmos-compatible outputs ? separate output gnd pin ? crowbar-current-free switching ? continuous source cu rrent capability: 40ma ? internal 1.182v 1% reference ? 16-pin narrow soic package applications threshold detectors window comparator level translators oscillator circuits battery-powered systems description the ts9004 low-voltage, micropower quad analog comparator is form-factor identical to the max934 analog comparator with improved electrical specifications. ideal for 3v or 5v single-supply applications, the ts9004 draws 22% lower supply current with a 50%-better in itial accuracy reference voltage. the ts9004 joins touchstone?s ts9001-1/2 and ts9002 analog comparators in the ?nanowatt analog?? high performance analog integrated circuits portfolio. this quad comparator can operate from single +2.5v to +11v supplies or from 1.25v to 5.5v dual supplies. the ts9004 exhibits an input voltage range from the negative supply rail to within 1.3v of the positive supply. in addition, its push-pull output stage is ttl/cmos compatible and capable of sinking and sourcing current. it also incorporates an internal 1.182v 1% voltage reference. a gnd connection available at the ts9004? s output stage enables ttl compatibility and bipolar-to-s ingle ended conversion. the ts9004 is fully specified over the -40oc to +85oc temperature range and is available in a 16-pin narrow soic package. low-power single/dual-supply quad comparator with reference typical application circuit using a ts9004 in a 5v bar-graph level gauge application the touchstone semiconducto r logo is a registered trademark of touchstone semiconductor, incorporated.
ts9004 page 2 ts9004ds r1p0 rtfds absolute maximum ratings supply voltage ( v+ to v - , v+ to gnd, gnd to v - )... ... - 0.3v, +12v voltage inputs (in+, in - ).............................................. (v+ + 0.3v) to (v - - 0.3v) output voltage ref ............................ ......................... (v+ + 0.3v) to (v - - 0.3v) out .......... ..... ........................ .........( v+ + 0.3v ) to (gnd - 0.3v) input current (in+, in - ). .... ........... ......... . ................... . .. .. .........20ma continuous power dissipation (t a = +70c) 16 - pin soic (derate 8.7 mw/ c above +70c) ................696 mw operating temperature ranges ......................... ..... - 40c to +85c storage temperature range ........................ ..... ... - 65c to +150c lead temperature (soldering, 10s) ..................... ..... ...........+300c output current ref .20ma out... .4 0ma output short - circuit duration (v+ 5.5v) ...... ........ . ..... continuous electrical and thermal s tresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not implied. exposure to any absolute maximum rating conditions for extended periods may affect device reliability and lifetime . package/ordering information order number part marking carrier quantity ts9004isn16 tp t s9004i tube 48 TS9004ISN16T tape & reel 2500 lead - free program: touchstone semico nductor supplies only lead - free packaging. consult touchstone semiconductor for products specified with wider operating temperature ranges.
ts9004 ts9004ds r1p0 page 3 rtfds electrical characteristics ? 5v operation v+ = 5v, v- = gnd = 0v; t a = -40oc to +85oc, unless otherwise noted. typical values are at t a = +25oc. see note 1. parameter conditions min typ max units power requirements supply voltage range see note 2 2.5 11 v supply current in+ = in- + 100mv t a = +25c 4.1 5.1 a -40c to +85c 8 comparator input offset voltage v cm = 2.5v t a = +25c 4.5 mv -40c to +85c 10 input leakage current (in-, in+) in+ = in- = 2.5v t a = +25c 0.01 2 na -40c to +85c 0.01 5 input common-mode voltage range v- v+ ? 1.3v v common-mode rejection ratio v- to (v+ ? 1.3v) 0.1 1 mv/v power-supply rejection ratio v+ = 2.5v to 11v 0.1 1 mv/v output voltage noise 100hz to 100khz 20 v rms response time (high-to-low transition) t a = +25c, 100pf load overdrive = 10 mv 17 s overdrive = 100 mv 7 response time (low-to-high transition) t a = +25c, 100pf load overdrive = 10 mv 17 s overdrive = 100 mv 7 output high voltage -40c to +85c; i out = 17ma v+ ? 0.4 v output low voltage -40c to +85c; i out = 1.8ma gnd + 0.4 v dual supply -40c to +85c; i out = 1.8ma v- + 0.4 v reference reference voltage t a = +25c 1.170 1.182 1.194 v -40c to +85c 1.158 1.206 reference line regulation 2.5v (v+ - v-) 5v t a = +25c 0.25 mv/v source current ? vref = 1% t a = +25c 20 25 a -40c to +85c 6 sink current ? vref = 1% t a = +25c 10 15 a -40c to +85c 4 output voltage noise 100hz to 100khz 100 v rms
ts9004 page 4 ts9004ds r1p0 rtfds electrical characteristics ? 3v operation v+ = 3v, v- = gnd = 0v; t a = -40oc to +85oc, unless otherwise noted. typical values are at t a = +25oc. see note 1. parameter conditions min typ max units power requirements supply current in+ = in- + 100mv t a = +25c 3.8 4.8 a -40c to +85c 6.5 comparator input offset voltage v cm = 1.5v t a = +25c 4.5 mv -40c to +85c 10 input leakage current (in-, in+) in+ = in- = 1.5v t a = +25c 0.01 1 na -40c to +85c 0.01 2.5 input common-mode voltage range v- v+ ? 1.3v v common-mode rejection ratio v- to (v+ ? 1.3v) 0.2 1 mv/v power-supply rejection ratio v+ = 2.5v to 11v 0.1 1 mv/v output voltage noise 100hz to 100khz 20 v rms response time (high-to-low transition) t a = +25c, 100pf load overdrive = 10 mv 17 s overdrive = 100 mv 7 response time (low-to-high transition) t a = +25c, 100pf load overdrive = 10 mv 17 s overdrive = 100 mv 7 output high voltage -40c to +85c; i out = 10ma v+ ? 0.4 v output low voltage -40c to +85c; i out = 0.8ma gnd + 0.4 v dual supply -40c to +85c; i out = 0.8ma v- + 0.4 v reference reference voltage t a = +25c 1.170 1.182 1.194 v -40c to +85c 1.158 1.206 reference line regulation 2.5v (v+ - v-) 3v t a = +25c 0.25 mv/v source current ? vref = 1% t a = +25c 20 25 a -40c to +85c 6 sink current ? vref = 1% t a = +25c 10 15 a -40c to +85c 4 output voltage noise 100hz to 100khz 100 v rms note 1: all specifications are 100% tested at t a = +25c. specification limits over temperature (t a = t min to t max ) are guaranteed by device characterization, not production tested. note 2: the ts9004 comparator operates below 2.5v. refer to the ?low-voltage operation: v+ = 1.5v? section.
ts9004 ts9004ds r1p0 page 5 rtfds typical performance characteristics v + = 5v; v - = gnd ; t a = +25c , unless otherwise noted. load current - ma v ol - v 4 8 1 0 output voltage low vs load current 0 12 1.5 2 0.5 16 load current - a reference voltage - v 5 10 1.165 1.155 1.180 reference output voltage vs output load current 0 15 1.170 1.175 1.160 20 temperature - oc reference voltage - v reference voltage vs temperature load current - ma v oh - v 10 20 2 1.5 output voltage high vs load current 0 30 2.5 40 50 3 3.5 v+ = 3v v+ = 5v sink 20 2.5 4 4.5 5 v+ = 3v v+ = 5v 25 30 1.190 1.185 source v+ = 3v or 5v - 15 10 - 40 35 60 85 1.16 1.14 1.19 1.17 1.18 1.15 1.21 1.20 1.22 24 28 temperature - oc supply current - a - 15 10 supply current vs temperature - 40 35 60 85 4 2 5 6 3 7 8 9 in+ = in - + 100mv v+ = 5v, v - = - 5v v+ = 5v, v - = 0v v+ = 3v, v - = 0v single - supply voltage - v supply current - a 2 1 supply current vs low supply voltages 1.5 2.5 10 0.1 10
ts9004 page 6 ts9004ds r1p0 rtfds typical performance characteristics v + = 5v; v - = gnd ; t a = +25c , unless otherwise noted. v ref - v hyst - mv in+ - in - - mv - 40 - 80 hysteresis control - 20 0 - 60 10 20 0 30 40 output high 50 60 20 80 40 output low no change in+ input voltage - m v output voltage - v - 0.2 - 0.1 1 0 transfer function - 0.3 0 3 4 2 0.1 load capacitance - nf response time - s response time vs load capacitance 20 40 0 60 80 v - = 0v 100 6 2 8 10 4 12 14 16 18 v ohl v olh response time - s output voltage - v 0 2 0 0 response time for various input overdrives (low - to - high) - 2 4 1 2 100 0 6 response time - s response time for various input overdrives (high - to - low) 10mv 20mv 50mv input voltage - v output voltage - v input voltage - v 8 5 3 4 100mv 10mv 20mv 50mv 100mv 10 12 14 16 18 20 0 0 1 2 100 5 3 4 0 2 - 2 4 6 8 10 12 14 16 18 single - supply voltage - v response time - s 1.5 2 10 response time at low supply voltages (low - to - high) 2.5 100 1 20mv overdrive 100mv overdrive 0.2 0.3 5
ts9004 ts9004ds r1p0 page 7 rtfds total supply voltage - v source current - ma 2.5 3.5 short - circuit source current vs supply voltage 1.5 4.5 5.5 total supply voltage - v sink current - ma 20 8 short - circuit sink current vs supply voltage 12 3.63 5.75 1.5 gnd connected to v - 80 0 120 160 40 200 out connected to v - out connected to v+ 7.88 10 16 24 typical performance characteristics v + = 5v; v - = gnd ; t a = +25c , unless otherwise noted. single - supply voltage - v current - ma 10 source and sink current at low supply voltages 100 1 source current into 0.75v load 1.5 2 2.5 sink current at v out = 0.4v
ts9004 page 8 ts9004ds r1p0 rtfds pin f unctions block diagram ts9004 name function so - 16 1 outb comparator b output. sinks and sourc es current. swings from v+ to gnd . 2 outa comparator a output. sinks and sourc es current. swings from v+ to gnd . 3 v+ positive supply voltage 4 ina - comparator a inverting input 5 ina+ comparator a noninverting input 6 inb - comparator b inverting input 7 inb+ comparator b noninverting input 8 ref 1.182v reference output with respect to v - . 9 v - negative supply voltage. connect to ground for single - supply operation. 10 inc - comparator c inverting input 11 inc+ comparator c noninverting input 12 ind - comparator d inverting input 13 ind+ comparator d noninverting input 14 gnd ground. connect to v - for single - supply operation. 15 outd comparator d output. sinks and sourc es current. swings from v+ to gnd . 16 outc comparator c output. sinks and sourc es current. swings from v+ to gnd .
ts9004 ts9004ds r1p0 page 9 rtfds theory of operation the ts9004 quad, low - voltage , micropower analog comparator provides excellent flexibility and performance while sourcing continuously up to 40ma of current. the ts9004 draws 8 a ( max) for all 4 comparators, including the reference. it exhibits an input offset voltage of 4.5 mv, and has an on - board +1.182v 0.75 % voltage reference. to minimize glitches that can occur with parasitic feedback or a less than optimal board layout, the design of the ts 9004 output stage is optimized to eliminate crowbar glitches as the output switches. power - supply and input signal ranges the ts9004 can operate from a single supply voltage range of +2.5v to +11v, provide s a wide common mode input voltage range of v - to v+ - 1.3v, and accept input signals ranging from v - to v+ - 1v. the inputs can accept an input as much as 300mv above and below the power supply rails without dam age to the part. while the ts 9004 is able to operate from a single supply voltage range, a gnd pin is available that allows for a dual supply operation with a range of 1.25v to 5.5v . if a single supply operation is desired, the gnd pin needs to be tied to v - . in a dual supply mode, the t s9004 is compatible with ttl/cmos with a 5v voltage. low - v oltage operation: v+ = 1 .5 v the ts9004 can operate down to a supply voltage of 2v; however, as the s upply voltage reduces, the ts 9004 supply current drops and the performance is degraded. when the supply voltage drops to 2.2v, the reference voltage will no longer function ; however, the comparators will function down to a 1v supply voltage. furthermore, the input voltage range is extende d to just below 1v the positive supply rail. for applications with a sub - 2.5v power supply, it is recommended to evaluate the circuit over the entire power supply range and temperature. comparator output the ts9004 has a gnd pin that allows the output to swing from v+ to gnd while the v - pin can be set to a voltage below gnd as long as the voltage difference between v+ and v - is within 11v. having a different voltage on v - will not affect the output swing. for ttl applications , v+ can be set to +5v 10% and v - can be set anywhere between 0v and - 5v 10% . furthermore, the output design of the ts9004 can source and sink more than 40ma and 5ma, respectively, while simultaneously maintaining a quiescent current in the microampere range. if the power dissi pation of the package is maintained within the max limit, the output can source pulses of 100ma of current with v+ set to +5v. in an effort to minimize external components needed to address power supply feedback, the ts9004 output does not produce crowbar switching current a s the output switches. with a 1 0mv input overdrive, the propagation delay of the ts9004 is 17 s. voltage reference the ts9004 has an on - board 1.182v referenc e voltage with an accuracy of 0.75 %. the ref p in is able to source and sink 20a and 10 a of current, respectively. the ref pin is referenced to v - and it should not be bypassed. noise considerations noise can play a role in the overall performance of the ts9004 . despite having a large gain, if the input voltage is near or equal to the input offset voltage, the output will randomly switch high and low. as a result, the ts9004 produces a peak - to - peak noise of about 0.3mv pp while the reference voltage produces a peak - to - peak noise of about 1mv pp . furthermore, it is important to design a layout that minimizes capacitive coupling from a given output to the reference pin as crosstalk can add noise and as a result, degrade perfor mance. a pplications information hysteresis as a result of circuit noise or unintended parasitic feedback, many analog comparators often break into oscillation within their linear region of operation especially when the applied differential input voltage approaches 0v (zero volt). externally - introduced hysteresis is a well - established technique to stabilizing analog comparator behavior and requires external components. as shown in figure 1 , adding comparator hysteresis creates two trip points: v thr (for the rising input voltage) and v thf (for the falling input voltage). the hysteresis band (v hb ) is defined as the voltage difference between the two trip points. when a comparators input voltages are equal, hysteresis effectively forces one comparator input to move quickly past the other input, moving the input
ts9004 page 10 ts9004ds r1p0 rtfds out of the region where oscillation occurs . fig ure 1 illustrates the case i n which an in - input is a fixed voltage and an in+ is varied. if the input signals were reversed, the figure would be the same with an inverted output. to add hysteresis to the ts9004, the circuit in figure 2 is implemented and uses positive feedback along with two external resistors to set the desired hysteresis. the circuit consumes more current and it slows down the hysteresis effect due to the high impedance on the feedback. the following procedure explains the steps to design the circuit for a desired hysteresis: 1. choosing r3. as the leakage current at the in+ pin is less than 1na, the current through r3 should be at least 100na to minimize offset voltage errors caused by the input leakage current. for r3 = 11.8m, the current through r3 is v ref /r3 at the trip point. in this case, a 10m resistor is a good standard value for r3. 2. next, th e desired hysteresis band (v h b ) is set. in this example, v h b is set to 50mv. 3. calculating r1. r 1 = r 3 x v v + = 10 m x 50 mv 5 v = 100 in this example, a 100 , 1% standard value resistor is selected for r1. 4. choose the trip point for v in rising (v thr ) , which is the threshold voltage at which the comparator switches its output from low to high as v in rises above the trip point . in this example, choose v thr = 3v. 5. calculating r2. r 2 = 1 v t r v ref x r 1 1 r 1 1 r 3 = 1 3 1 . 182 v x 100 1 100 1 10 m = 5 . 44 in this example, a 4.9 , 1% standard value resistor is selected for r2. 6. the last step is to verify the trip voltages and hysteresis band using the standard resistance values : v t r = v ref x r 1 x 1 r 1 + 1 r 2 + 1 r 3 v t f = v t r C r 1 x v + r 3 board layout and bypassing while power - s upply bypass capacitors are not typically required, it is good engineering practice to use 0.1f bypass capacitors close to the devices power su pply pins when the power supply impedance is high, t he power supply leads are long, or there is exce ssive noise on the power supply traces. to reduce str ay capacitanc e, it is also good engineering practice to make signal trace lengths as short as possible . also recommended are a ground plane and surface mount resistors and capacitors. figure 1. threshold hysteresis band figure 2 . external hysteresis
ts9004 ts9004ds r1p0 page 11 rtfds bar - graph level gauge a simple four - stage le vel detector is shown in figure 3 using the ts 9004 . due to its high output source capability, the ts9004 is perfect for driving leds. when all of the leds are on, the threshold voltage is given as v in = ( r1 + r2)/r1 volts. all other threshold voltages are scaled down accordingly by ?, ?, and ? the threshold voltage. the current through the leds is limited by the output resistors . level shifter figure 4 pr ovides a simple way to shift from bipolar 5v inputs to ttl signals by using the ts9004 . to protect the comparator inputs, 10 resistors are placed in series and do not have an effect on the performance of the circuit. figure 3. bar - graph level gauge figure 4. level shifter: 5v input into cmos output
ts9004 page 12 touchstone semiconductor, inc. ts9004ds r1p0 630 alder drive, milpitas, ca 95035 rt f ds +1 (408) 215 - 1220 ? www.touchstonesemi.com package outline draw ing 16 - pin soic package outline drawing (n.b., drawings are not to scale) information furnished by touchstone semiconductor is believed to be accurate and reliable. however, touchstone semiconductor does not assume any responsibility for its use nor for any infringements of patents or other rights of third parties that may result from its use , and all information provided by touchstone semiconductor and its suppliers is provided on an as is basis, without warranty of any kind . touchstone semiconductor reserves the right to change product specifications and product descriptions at any time without any advance notice. no license is granted by implication or otherwise under any patent or patent rights of touchstone semicondu ctor. touchstone semiconductor assumes no liability for applications assistance or customer product design. customers are responsible for thei r products and applications using touchstone semiconductor components. to minimize the risk associated with custom er products and applications, customers should provide adequate design and operating safeguards. trademarks and registered trademarks are the property of t heir respective owners. d e t a i l a 0 . 2 5 m a x 0 . 1 9 m i n n o t e : 1 . d d o e s n o t i n c l u d e m o l d f l a s h , p r o t r u s i o n s o r g a t e b u r r s . m o l d f l a s h , p r o t r u s i o n s o r g a t e b u r r s s h a l l n o t e x c e e d 0 . 1 5 m m p e r s i d e . 2 . e d o e s n o t i n c l u d e i n t e r - l e a d f l a s h o r p r o t r u s i o n s . i n t e r - l e a d f l a s h a n d p r o t r u s i o n s o r g a t e b u r r s s h a l l n o t e x c e e d 0 . 2 5 m m p e r s i d e . 3 . c o n t r o l l i n g d i m e n s i o n s i n m i l i m e t e r s a n d a n g l e s i n d e g r e e s . 4 . t h i s p a r t i s c o m p l i a n t w i t h j e d e c s p e c i f i c a t i o n m s - 0 1 2 a b 5 . l e a d s p a n / s t a n d o f f h e i g h t / c o p l a n a r i t y a r e c o n s i d e r e d a s s p e c i a l c h a r a c t e r i s t i c . d e t a i l a 0 . 5 1 m a x 0 . 3 3 m i n 0 . 2 5 m a x o . 1 0 m i n p i n 1 i d m a r k 1 0 . 0 1 m a x 9 . 8 0 m i n ( d ) 1 . 2 7 t y p 1 . 7 5 m a x g a u g e p l a n e 0 ' - 8 ' 0 . 8 6 3 m a x 0 . 4 0 6 m i n 6 . 2 0 m a x 5 . 8 0 m i n 3 . 9 9 m a x 3 . 8 1 m i n ( e ) 0 . 2 5 0 . 4 8 m a x 0 . 2 8 m i n 4 5 ' a n g l e 7 ' t y p a l l s i d e 0 . 1 0 m a x 3 . 8 9 m a x 3 . 7 3 m i n 3 . 9 9 m a x 3 . 8 1 m i n 0 . 7 9 m a x 0 . 6 9 m i n 0 . 5 0 8 r e f


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